Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB039N10N3GATMA1

IPB039N10N3GATMA1

IPB039N10N3GATMA1

Part NumberIPB039N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 160A TO263-7

DatasheetIPB039N10N3 G

Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7

To learn about the specification of IPB039N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB039N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB039N10N3GATMA1.
We are offering IPB039N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB039N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB039N10N3 G
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IPB039N10N3GATMA1 - Related Products

	IPB081N06L3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FDS5680	ON Semiconductor, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SIHH26N60EF-T1-GE3	Vishay Siliconix, N-Channel 600V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	CSD18532Q5B	Texas Instruments, N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	RCD075N19TL	Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	STD16NF06T4	STMicroelectronics, N-Channel 60V 16A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II	View
	FQU4N50TU-WS	ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®	View
	SI7112DN-T1-GE3	Vishay Siliconix, N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RF4E080BNTR	Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	CSD17555Q5A	Texas Instruments, N-Channel 30V 24A (Ta), 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	PSMN016-100BS,118	Nexperia USA Inc., N-Channel 100V 57A (Tj) 148W (Tc) Surface Mount D2PAK,	View
	FCB36N60NTM	ON Semiconductor, N-Channel 600V 36A (Tc) 312W (Tc) Surface Mount D²PAK, SupreMOS™	View

IPB039N10N3GATMA1 - Tags

IPB039N10N3GATMA1 IPB039N10N3GATMA1 PDF IPB039N10N3GATMA1 datasheet IPB039N10N3GATMA1 specification IPB039N10N3GATMA1 image IPB039N10N3GATMA1 India Renesas Electronics India IPB039N10N3GATMA1 buy IPB039N10N3GATMA1 IPB039N10N3GATMA1 price IPB039N10N3GATMA1 distributor IPB039N10N3GATMA1 supplier IPB039N10N3GATMA1 wholesales