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IPB107N20NAATMA1

IPB107N20NAATMA1

Part NumberIPB107N20NAATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 88A TO263-3

DatasheetIPx(107,110)N20NA

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

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IPB107N20NAATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx(107,110)N20NA
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7100pF @ 100V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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