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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB123N10N3G, (IPP,IPI)126N10N3 Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 12.3mOhm @ 46A, 10V Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDD2582 ON Semiconductor, N-Channel 150V 3.7A (Ta), 21A (Tc) 95W (Tc) Surface Mount TO-252AA, PowerTrench®
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TSM220NB06CR RLG Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
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NTMFS6H801NT1G ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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NDS355AN ON Semiconductor, N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
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IXFT26N100XHV IXYS, N-Channel 1000V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT), HiPerFET™
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IPP80R1K4P7XKSA1 Infineon Technologies, N-Channel 800V 4A (Tc) 32W (Tc) Through Hole PG-TO220-3, CoolMOS™
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IPL60R065P7AUMA1 Infineon Technologies, N-Channel 650V 41A (Tc) 201W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
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SIHG35N60E-GE3 Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-247AC,
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BUK9Y25-80E,115 Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101
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BUK9Y59-60E,115 Nexperia USA Inc., N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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TPH1R403NL,L1Q Toshiba Semiconductor and Storage, N-Channel 30V 60A (Ta) 1.6W (Ta), 64W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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FCD900N60Z ON Semiconductor, N-Channel 600V 4.5A (Tc) 52W (Tc) Surface Mount TO-252, (D-Pak), SuperFET® II
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