IPB180N04S400ATMA1
IPB180N04S400ATMA1
Part Number IPB180N04S400ATMA1
Description MOSFET N-CH 40V 180A TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
To learn about the specification of IPB180N04S400ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB180N04S400ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB180N04S400ATMA1.
We are offering IPB180N04S400ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB180N04S400ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-00
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.98mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 22880pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S400ATMA1 - Related ProductsMore >>
IPW60R190P6FKSA1
Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6
View
IRLIZ34GPBF
Vishay Siliconix, N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-220-3,
View
RFD14N05SM9A
ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,
View
SIHW33N60E-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD,
View
TK7A60W5,S5VX
Toshiba Semiconductor and Storage, N-Channel 600V 7A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
View
STL210N4F7AG
STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F7
View
FDMS86201
ON Semiconductor, N-Channel 120V 11.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
View
SQM120N10-3M8_GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
View
IRLL3303TRPBF
Infineon Technologies, N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
IPL60R365P7AUMA1
Infineon Technologies, N-Channel 650V 10A (Tc) 46W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
View
BSS138-7-F
Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
IPN80R4K5P7ATMA1
Infineon Technologies, N-Channel 800V 1.5A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
IPB180N04S400ATMA1 - Tags