IPB180N04S400ATMA1
IPB180N04S400ATMA1
Part Number IPB180N04S400ATMA1
Description MOSFET N-CH 40V 180A TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
To learn about the specification of IPB180N04S400ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB180N04S400ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB180N04S400ATMA1.
We are offering IPB180N04S400ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB180N04S400ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-00
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.98mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 22880pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S400ATMA1 - Related ProductsMore >>
IXFN120N65X2
IXYS, N-Channel 650V 108A (Tc) 890W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
IRL2703PBF
Infineon Technologies, N-Channel 30V 24A (Tc) 45W (Tc) Through Hole TO-220AB, HEXFET®
View
IXFH52N30Q
IXYS, N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
NTP6410ANG
ON Semiconductor, N-Channel 100V 76A (Tc) 188W (Tc) Through Hole TO-220AB,
View
SIJA52ADP-T1-GE3
Vishay Siliconix, N-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
MCMN2012-TP
Micro Commercial Co, N-Channel 20V 12A (Ta) Surface Mount DFN2020-6J,
View
STF35N60DM2
STMicroelectronics, N-Channel 600V 28A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ DM2
View
CSD17575Q3T
Texas Instruments, N-Channel 30V 60A (Ta) 2.8W (Ta), 108W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™
View
FDB150N10
ON Semiconductor, N-Channel 100V 57A (Tc) 110W (Tc) Surface Mount D²PAK, PowerTrench®
View
STD16N65M5
STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount DPAK, MDmesh™ V
View
DMT6004SCT
Diodes Incorporated, N-Channel 60V 100A (Tc) 2.3W (Ta), 113W (Tc) Through Hole TO-220-3,
View
IRF820ASPBF
Vishay Siliconix, N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D2PAK,
View
IPB180N04S400ATMA1 - Tags