Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB60R099C7ATMA1

IPB60R099C7ATMA1

IPB60R099C7ATMA1

Part NumberIPB60R099C7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 22A TO263-3

DatasheetIPB60R099C7

Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3

To learn about the specification of IPB60R099C7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB60R099C7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB60R099C7ATMA1.
We are offering IPB60R099C7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB60R099C7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB60R099C7
Standard Package	1000
Manufacturer	Infineon Technologies
Series	CoolMOS™ C7
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1819pF @ 400V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

IPB60R099C7ATMA1 - Related Products

	SPW20N60C3FKSA1	Infineon Technologies, N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	AOSP66923	Alpha & Omega Semiconductor Inc., N-Channel 100V 12A (Ta) 3.1W (Ta) Surface Mount 8-SOIC, AlphaSGT™	View
	PMZ550UNEYL	Nexperia USA Inc., N-Channel 30V 590mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006-3,	View
	MMBF170-7-F	Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	IRLHS6242TRPBF	Infineon Technologies, N-Channel 20V 10A (Ta), 12A (Tc) 1.98W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2), HEXFET®	View
	IXFY4N60P3	IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252, HiPerFET™, Polar3™	View
	SQ4840EY-T1_GE3	Vishay Siliconix, N-Channel 40V 20.7A (Tc) 7.1W (Tc) Surface Mount 8-SO, TrenchFET®	View
	APT18M100B	Microsemi Corporation, N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO-247 [B],	View
	RQ3E130BNTB	Rohm Semiconductor, N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	SQ3418EV-T1_GE3	Vishay Siliconix, N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	STB28N65M2	STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	FQP50N06	ON Semiconductor, N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®	View

IPB60R099C7ATMA1 - Tags

IPB60R099C7ATMA1 IPB60R099C7ATMA1 PDF IPB60R099C7ATMA1 datasheet IPB60R099C7ATMA1 specification IPB60R099C7ATMA1 image IPB60R099C7ATMA1 India Renesas Electronics India IPB60R099C7ATMA1 buy IPB60R099C7ATMA1 IPB60R099C7ATMA1 price IPB60R099C7ATMA1 distributor IPB60R099C7ATMA1 supplier IPB60R099C7ATMA1 wholesales