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IPB60R099C7ATMA1


IPB60R099C7ATMA1

Part NumberIPB60R099C7ATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPB60R099C7ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1819pF @ 400V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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