IXTP110N12T2
IXTP110N12T2
Part Number IXTP110N12T2 Manufacturer IXYS Description 120V/110A TRENCHT2 POWER MOSFET Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 120V 110A (Tc) 517W (Tc) Through Hole TO-220AB
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IXTP110N12T2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,P)110N12T2 Standard Package 50 Manufacturer IXYS Series TrenchT2™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6570pF @ 25V FET Feature - Power Dissipation (Max) 517W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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