IRF640NLPBF
IRF640NLPBF
Part Number IRF640NLPBF
Description MOSFET N-CH 200V 18A TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262
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IRF640NLPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF640N(S,L)PbF
Standard Package 1000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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