Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Part NumberSQ2362ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.4A TO236

DatasheetSQ2362ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount

To learn about the specification of SQ2362ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2362ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2362ES-T1_GE3.
We are offering SQ2362ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2362ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2362ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2362ES-T1_GE3 - Related Products

	DMN3008SFG-7	Diodes Incorporated, N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	IRFPS43N50KPBF	Vishay Siliconix, N-Channel 500V 47A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA),	View
	IRFS23N20DTRLP	Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	SUM110N10-09-E3	Vishay Siliconix, N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SI4850EY-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®	View
	BSC057N08NS3GATMA1	Infineon Technologies, N-Channel 80V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	CSD18536KCS	Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™	View
	SQS484EN-T1_GE3	Vishay Siliconix, N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	FDV305N	ON Semiconductor, N-Channel 20V 900mA (Ta) 350mW (Ta) Surface Mount SOT-23, PowerTrench®	View
	IRFHS8342TRPBF	Infineon Technologies, N-Channel 30V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6, HEXFET®	View
	AOD4130	Alpha & Omega Semiconductor Inc., N-Channel 60V 6.5A (Ta), 30A (Tc) 2.5W (Ta), 52W (Tc) Surface Mount TO-252, (D-Pak),	View
	SUM70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View

SQ2362ES-T1_GE3 - Tags

SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 PDF SQ2362ES-T1_GE3 datasheet SQ2362ES-T1_GE3 specification SQ2362ES-T1_GE3 image SQ2362ES-T1_GE3 India Renesas Electronics India SQ2362ES-T1_GE3 buy SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 price SQ2362ES-T1_GE3 distributor SQ2362ES-T1_GE3 supplier SQ2362ES-T1_GE3 wholesales