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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2362ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 30V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
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STF5N60M2
STMicroelectronics, N-Channel 600V 3.7A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
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FQD10N20LTM
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IRF7862TRPBF
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IRLZ24PBF
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2N7000-D74Z
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FDB082N15A
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R6024ENJTL
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IRF520PBF
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DMN4008LFG-7
Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
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DMTH6004SCTBQ-13
Diodes Incorporated, N-Channel 60V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101
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