Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Part NumberSQ2362ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.4A TO236

DatasheetSQ2362ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount

To learn about the specification of SQ2362ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2362ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2362ES-T1_GE3.
We are offering SQ2362ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2362ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2362ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2362ES-T1_GE3 - Related Products

	BUK965R8-100E,118	Nexperia USA Inc., N-Channel 100V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	BUK9M19-60EX	Nexperia USA Inc., N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
	SIJ438DP-T1-GE3	Vishay Siliconix, N-Channel 40V 80A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BUK7227-100B,118	Nexperia USA Inc., N-Channel 100V 48A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	DN3545N8-G	Microchip Technology, N-Channel 450V 200mA 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	NDS331N	ON Semiconductor, N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	STL260N3LLH6	STMicroelectronics, N-Channel 30V 260A (Tc) 166W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ H6	View
	DMN3730UFB-7	Diodes Incorporated, N-Channel 30V 750mA (Ta) 470mW (Ta) Surface Mount 3-DFN,	View
	RSH065N06TB1	Rohm Semiconductor, N-Channel 60V 6.5A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	BUK9219-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	SI1070X-T1-GE3	Vishay Siliconix, N-Channel 30V 236mW (Ta) Surface Mount SC-89-6, TrenchFET®	View
	IPB107N20NAATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SQ2362ES-T1_GE3 - Tags

SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 PDF SQ2362ES-T1_GE3 datasheet SQ2362ES-T1_GE3 specification SQ2362ES-T1_GE3 image SQ2362ES-T1_GE3 India Renesas Electronics India SQ2362ES-T1_GE3 buy SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 price SQ2362ES-T1_GE3 distributor SQ2362ES-T1_GE3 supplier SQ2362ES-T1_GE3 wholesales