Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Part NumberSQ2362ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.4A TO236

DatasheetSQ2362ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount

To learn about the specification of SQ2362ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2362ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2362ES-T1_GE3.
We are offering SQ2362ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2362ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2362ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2362ES-T1_GE3 - Related Products

	IPB60R120P7ATMA1	Infineon Technologies, N-Channel 650V 26A (Tc) 95W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	IXFX34N80	IXYS, N-Channel 800V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	BSS123	ON Semiconductor, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,	View
	IRF6726MTRPBF	Infineon Technologies, N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®	View
	2N7002BKW,115	Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™	View
	SUD19N20-90-E3	Vishay Siliconix, N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IRFH5300TRPBF	Infineon Technologies, N-Channel 30V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	FDB14AN06LA0-F085	ON Semiconductor, N-Channel 60V 67A (Tc) 125W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	SIHP28N60EF-GE3	Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	FCP600N60Z	ON Semiconductor, N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3, SuperFET® II	View
	FDMS7660	ON Semiconductor, N-Channel 30V 25A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	IPN50R800CEATMA1	Infineon Technologies, N-Channel 500V 7.6A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE	View

SQ2362ES-T1_GE3 - Tags

SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 PDF SQ2362ES-T1_GE3 datasheet SQ2362ES-T1_GE3 specification SQ2362ES-T1_GE3 image SQ2362ES-T1_GE3 India Renesas Electronics India SQ2362ES-T1_GE3 buy SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 price SQ2362ES-T1_GE3 distributor SQ2362ES-T1_GE3 supplier SQ2362ES-T1_GE3 wholesales