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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2362ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 30V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
SIJA52DP-T1-GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FCH041N65EFL4
ON Semiconductor, N-Channel 650V 76A (Tc) 595W (Tc) Through Hole TO-247, FRFET®, SuperFET® II
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NTLJS4114NT1G
ON Semiconductor, N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2), µCool™
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IPA075N15N3GXKSA1
Infineon Technologies, N-Channel 150V 43A (Tc) 39W (Tc) Through Hole PG-TO220-3, OptiMOS™
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PSMN0R9-25YLC,115
Nexperia USA Inc., N-Channel 25V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,
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IPAN70R750P7SXKSA1
Infineon Technologies, N-Channel 700V 6.5A (Tc) 20.8W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
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NTTFS4928NTAG
ON Semiconductor, N-Channel 30V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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MVGSF1N03LT1G
ON Semiconductor, N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23,
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NVMFS4C310NT1G
ON Semiconductor, N-Channel 30V 17A (Ta), 51A (Tc) 3.5W (Ta), 32W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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LND150N8-G
Microchip Technology, N-Channel 500V 30mA (Tj) 1.6W (Ta) Surface Mount SOT-89-3,
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STF45N65M5
STMicroelectronics, N-Channel 650V 35A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ V
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CSD18537NQ5AT
Texas Instruments, N-Channel 60V 50A (Ta) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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