Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

Part NumberSQ2362ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.4A TO236

DatasheetSQ2362ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount

To learn about the specification of SQ2362ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2362ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2362ES-T1_GE3.
We are offering SQ2362ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2362ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2362ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2362ES-T1_GE3 - Related Products

	IRLH5034TRPBF	Infineon Technologies, N-Channel 40V 29A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
	TSM10N80CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 9.5A (Tc) 48W (Tc) Through Hole ITO-220AB,	View
	RUC002N05T116	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SST3,	View
	BSC0901NSATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	STP10NM60N	STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220AB, MDmesh™ II	View
	APT10021JLL	Microsemi Corporation, N-Channel 1000V 37A (Tc) 694W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®	View
	TK58A06N1,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 58A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	DMT6009LSS-13	Diodes Incorporated, N-Channel 60V 10.8A (Ta) 1.25W (Ta) Surface Mount 8-SO,	View
	SK8603150L	Panasonic Electronic Components, N-Channel 30V 26A (Ta), 89A (Tc) 2.9W (Ta), 34W (Tc) Surface Mount HSO8-F4-B,	View
	STB14NK60ZT4	STMicroelectronics, N-Channel 600V 13.5A (Tc) 160W (Tc) Surface Mount D2PAK, SuperMESH™	View
	IXTH6N100D2	IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH),	View
	SQM120N04-1M7L_GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263, TrenchFET®	View

SQ2362ES-T1_GE3 - Tags

SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 PDF SQ2362ES-T1_GE3 datasheet SQ2362ES-T1_GE3 specification SQ2362ES-T1_GE3 image SQ2362ES-T1_GE3 India Renesas Electronics India SQ2362ES-T1_GE3 buy SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 price SQ2362ES-T1_GE3 distributor SQ2362ES-T1_GE3 supplier SQ2362ES-T1_GE3 wholesales