IPD053N06NATMA1
IPD053N06NATMA1
Part Number IPD053N06NATMA1 Description MOSFET N-CH 60V 18A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD053N06NATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD053N06NATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD053N06NATMA1.
We are offering IPD053N06NATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD053N06NATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD053N06N Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 45A, 10V Vgs(th) (Max) @ Id 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V FET Feature - Power Dissipation (Max) 3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD053N06NATMA1 - Related ProductsMore >>
SPD04N60C3ATMA1 Infineon Technologies, N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
STB42N65M5 STMicroelectronics, N-Channel 650V 33A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ V
View
IPT059N15N3ATMA1 Infineon Technologies, N-Channel 150V 155A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
SQD25N06-22L_GE3 Vishay Siliconix, N-Channel 60V 25A (Tc) 62W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
RU1C002UNTCL Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F,
View
TSM210N02CX RFG Taiwan Semiconductor Corporation, N-Channel 20V 6.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,
View
AOT8N80L Alpha & Omega Semiconductor Inc., N-Channel 800V 7.4A (Tc) 245W (Tc) Through Hole TO-220,
View
STP5NK60Z STMicroelectronics, N-Channel 600V 5A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH™
View
STD13N60DM2 STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2
View
SIR846DP-T1-GE3 Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
TK34A10N1,S4X Toshiba Semiconductor and Storage, N-Channel 100V 34A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
FQD2N100TM ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
View
IPD053N06NATMA1 - Tags
English
