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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD30N06S4L-23 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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BSC052N08NS5ATMA1 Infineon Technologies, N-Channel 80V 95A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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FQD16N25CTM ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®
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VN2210N2 Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,
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SI4436DY-T1-E3 Vishay Siliconix, N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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STB18NM60ND STMicroelectronics, N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D2PAK, FDmesh™ II
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