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IRF6662TRPBF


IRF6662TRPBF

Part NumberIRF6662TRPBF

Manufacturer

Description

Datasheet

Package / CaseDirectFET™ Isometric MZ

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF6662TRPBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1360pF @ 25V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ

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