Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD30N08S2L21ATMA1

IPD30N08S2L21ATMA1

IPD30N08S2L21ATMA1

Part NumberIPD30N08S2L21ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 75V 30A TO252-3

DatasheetIPD30N08S2L-21

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 75V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD30N08S2L21ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD30N08S2L21ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD30N08S2L21ATMA1.
We are offering IPD30N08S2L21ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD30N08S2L21ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD30N08S2L-21
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1650pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD30N08S2L21ATMA1 - Related Products

	BUK7608-40B,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 157W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STD120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	FQPF7N80C	ON Semiconductor, N-Channel 800V 6.6A (Tc) 56W (Tc) Through Hole TO-220F, QFET®	View
	IRFP340PBF	Vishay Siliconix, N-Channel 400V 11A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	STD2NK90Z-1	STMicroelectronics, N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK, SuperMESH™	View
	2N7002P,235	Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,	View
	CSD19538Q2	Texas Instruments, N-Channel 100V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	IXFA14N85XHV	IXYS, N-Channel 850V 14A (Tc) 460W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™	View
	BUK7Y7R6-40EX	Nexperia USA Inc., N-Channel 40V 79A (Tc) 94.3W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	BUK7Y6R0-60EX	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	DMN3115UDM-7	Diodes Incorporated, N-Channel 30V 3.2A (Ta) 900mW (Ta) Surface Mount SOT-26,	View
	IXTP08N100D2	IXYS, N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,	View

IPD30N08S2L21ATMA1 - Tags

IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 PDF IPD30N08S2L21ATMA1 datasheet IPD30N08S2L21ATMA1 specification IPD30N08S2L21ATMA1 image IPD30N08S2L21ATMA1 India Renesas Electronics India IPD30N08S2L21ATMA1 buy IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 price IPD30N08S2L21ATMA1 distributor IPD30N08S2L21ATMA1 supplier IPD30N08S2L21ATMA1 wholesales