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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N06S4L-12
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI730GPBF
Vishay Siliconix, N-Channel 400V 3.7A (Tc) 35W (Tc) Through Hole TO-220-3,
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BUK964R7-80E,118
Nexperia USA Inc., N-Channel 80V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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RSJ650N10TL
Rohm Semiconductor, N-Channel 100V 65A (Ta) 100W (Tc) Surface Mount LPTS,
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STB45N50DM2AG
STMicroelectronics, N-Channel 500V 35A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ DM2
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IRF644STRRPBF
Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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SQS420EN-T1_GE3
Vishay Siliconix, N-Channel 20V 8A (Tc) 18W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IRLB8314PBF
Infineon Technologies, N-Channel 30V 130A (Tc) 125W (Tc) Through Hole TO-220-3, HEXFET®
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FDMS8320L
ON Semiconductor, N-Channel 40V 36A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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STD13N60DM2
STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2
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SIHG15N60E-GE3
Vishay Siliconix, N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-247AC,
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TN2124K1-G
Microchip Technology, N-Channel 240V 134mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
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R6009JNXC7G
Rohm Semiconductor, N-Channel 600V 9A (Tc) 53W (Tc) Through Hole TO-220FM,
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