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IPD50R280CEAUMA1

IPD50R280CEAUMA1

Part NumberIPD50R280CEAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 550V 18.1A TO252

DatasheetIPD50R280CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 550V 18.1A (Tc) 119W (Tc) Surface Mount PG-TO252

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IPD50R280CEAUMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD50R280CE
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25°C	18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id	3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	32.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	773pF @ 100V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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IPD50R280CEAUMA1 - Tags

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