IPD50R280CEAUMA1
IPD50R280CEAUMA1
Part Number IPD50R280CEAUMA1 Description MOSFET N-CH 550V 18.1A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 550V 18.1A (Tc) 119W (Tc) Surface Mount PG-TO252
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IPD50R280CEAUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50R280CE Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 18.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V FET Feature - Power Dissipation (Max) 119W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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