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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N40DM2AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Through Hole TO-220AB,
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SI4848DY-T1-GE3
Vishay Siliconix, N-Channel 150V 2.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
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SIR124DP-T1-RE3
Vishay Siliconix, N-Channel 80V 16.1A (Ta), 56.8A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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