IPD60R380P6ATMA1
IPD60R380P6ATMA1
Part Number IPD60R380P6ATMA1 Description MOSFET N-CH 600V DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD60R380P6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R380P6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R380P6ATMA1.
We are offering IPD60R380P6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD60R380P6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx60R380P6 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ P6 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R380P6ATMA1 - Related ProductsMore >>
CPC3703CTR IXYS Integrated Circuits Division, N-Channel 250V 360mA (Ta) 1.1W (Ta) Surface Mount SOT-89-3,
View
IRL530NSTRLPBF Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK, HEXFET®
View
IRFP2907ZPBF Infineon Technologies, N-Channel 75V 90A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®
View
APT7F120B Microsemi Corporation, N-Channel 1200V 7A (Tc) 335W (Tc) Through Hole TO-247 [B],
View
IPB081N06L3GATMA1 Infineon Technologies, N-Channel 60V 50A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
SI7114DN-T1-E3 Vishay Siliconix, N-Channel 30V 11.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRF7811AVTRPBF Infineon Technologies, N-Channel 30V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IRFB3207ZGPBF Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
View
STP45N60DM6 STMicroelectronics, N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-220, MDmesh™ DM6
View
SQD100N04-3M6_GE3 Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,
View
BUK7623-75A,118 Nexperia USA Inc., N-Channel 75V 53A (Tc) 138W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
View
FDS2572 ON Semiconductor, N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
View
IPD60R380P6ATMA1 - Tags
English
