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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx7xCN10N G, IPx80CN10N G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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