SIDR638DP-T1-GE3
SIDR638DP-T1-GE3
Part Number SIDR638DP-T1-GE3 Description MOSFET N-CH 40V 100A SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 100A (Tc) 125W (Tc) Surface Mount PowerPAK® SO-8DC
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SIDR638DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR638DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 204nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 20V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8
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