Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

Part NumberIPD80R2K8CEATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 1.9A TO252-3

DatasheetIPx80R2K8CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R2K8CEATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R2K8CEATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R2K8CEATMA1.
We are offering IPD80R2K8CEATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R2K8CEATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx80R2K8CE
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 100V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R2K8CEATMA1 - Related Products

	AUIRFS3107TRL	Infineon Technologies, N-Channel 75V 195A (Tc) 370W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, HEXFET®	View
	SIHS36N50D-E3	Vishay Siliconix, N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUPER-247™ (TO-274AA),	View
	IPC100N04S5L1R9ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 100W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™	View
	FCH041N60E	ON Semiconductor, N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3, SuperFET® II	View
	BUK7610-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	R6015KNX	Rohm Semiconductor, N-Channel 600V 15A (Tc) 60W (Tc) Through Hole TO-220FM,	View
	STL10N3LLH5	STMicroelectronics, N-Channel 30V 9A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ V	View
	IXFH36N50P	IXYS, N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarP2™	View
	IRFB7530PBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	IXTF1R4N450	IXYS, N-Channel 4500V 1.4A (Tc) 190W (Tc) Through Hole ISOPLUS i4-PAC™,	View
	APT5010JLLU2	Microsemi Corporation, N-Channel 500V 41A (Tc) 378W (Tc) Chassis Mount SOT-227,	View
	2N7002E-T1-E3	Vishay Siliconix, N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236),	View

IPD80R2K8CEATMA1 - Tags

IPD80R2K8CEATMA1 IPD80R2K8CEATMA1 PDF IPD80R2K8CEATMA1 datasheet IPD80R2K8CEATMA1 specification IPD80R2K8CEATMA1 image IPD80R2K8CEATMA1 India Renesas Electronics India IPD80R2K8CEATMA1 buy IPD80R2K8CEATMA1 IPD80R2K8CEATMA1 price IPD80R2K8CEATMA1 distributor IPD80R2K8CEATMA1 supplier IPD80R2K8CEATMA1 wholesales