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BSP149H6327XTSA1

BSP149H6327XTSA1

Part NumberBSP149H6327XTSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 660MA SOT-223

DatasheetBSP149

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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BSP149H6327XTSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSP149
Standard Package	1
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Rds On (Max) @ Id, Vgs	1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id	1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA

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