Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1

IPD80R3K3P7ATMA1

Part NumberIPD80R3K3P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 1.9A TO252-3

DatasheetIPD80R3K3P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R3K3P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R3K3P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R3K3P7ATMA1.
We are offering IPD80R3K3P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R3K3P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R3K3P7
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	5.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 500V
FET Feature	-
Power Dissipation (Max)	18W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R3K3P7ATMA1 - Related Products

	IRL630PBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	SSM3K324R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	STD1NK80ZT4	STMicroelectronics, N-Channel 800V 1A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™	View
	IRLS3036TRL7PP	Infineon Technologies, N-Channel 60V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®	View
	SUG90090E-GE3	Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®	View
	TSM60N600CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 8A (Tc) 83W (Tc) Through Hole TO-251 (IPAK),	View
	IRLH5030TRPBF	Infineon Technologies, N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
	SIHH180N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	STB11NM80T4	STMicroelectronics, N-Channel 800V 11A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™	View
	FDB075N15A-F085	ON Semiconductor, N-Channel 150V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®	View
	STP19NM50N	STMicroelectronics, N-Channel 500V 14A (Tc) 110W (Tc) Through Hole TO-220AB, MDmesh™ II	View
	PSMN4R0-25YLC,115	Nexperia USA Inc., N-Channel 25V 84A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,	View

IPD80R3K3P7ATMA1 - Tags

IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 PDF IPD80R3K3P7ATMA1 datasheet IPD80R3K3P7ATMA1 specification IPD80R3K3P7ATMA1 image IPD80R3K3P7ATMA1 India Renesas Electronics India IPD80R3K3P7ATMA1 buy IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 price IPD80R3K3P7ATMA1 distributor IPD80R3K3P7ATMA1 supplier IPD80R3K3P7ATMA1 wholesales