Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R900P7ATMA1

IPD80R900P7ATMA1

IPD80R900P7ATMA1

Part NumberIPD80R900P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 6A TO252-3

DatasheetIPD80R900P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 6A (Tc) 45W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R900P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R900P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R900P7ATMA1.
We are offering IPD80R900P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R900P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R900P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 500V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R900P7ATMA1 - Related Products

	IRF624PBF	Vishay Siliconix, N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB,	View
	STH180N10F3-2	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, STripFET™ III	View
	BUK9Y3R0-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	HTNFET-T	Honeywell Aerospace, N-Channel 55V 50W (Tj) Through Hole 4-Power Tab, HTMOS™	View
	SI7110DN-T1-E3	Vishay Siliconix, N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	2N7002BKVL	Nexperia USA Inc., N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	STW60NM50N	STMicroelectronics, N-Channel 500V 68A (Tc) 446W (Tc) Through Hole TO-247, MDmesh™ II	View
	IXTH160N10T	IXYS, N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-247 (IXTH), TrenchMV™	View
	SSM3K35AMFV,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount VESM, U-MOSIII	View
	IRF840BPBF	Vishay Siliconix, N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB,	View
	FDS6294	ON Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TSM048NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 16A (Ta), 107A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View

IPD80R900P7ATMA1 - Tags

IPD80R900P7ATMA1 IPD80R900P7ATMA1 PDF IPD80R900P7ATMA1 datasheet IPD80R900P7ATMA1 specification IPD80R900P7ATMA1 image IPD80R900P7ATMA1 India Renesas Electronics India IPD80R900P7ATMA1 buy IPD80R900P7ATMA1 IPD80R900P7ATMA1 price IPD80R900P7ATMA1 distributor IPD80R900P7ATMA1 supplier IPD80R900P7ATMA1 wholesales