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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4-05
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 86A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2960pF @ 25V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7862TRPBF
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IPD95R450P7ATMA1
Infineon Technologies, N-Channel 950V 14A (Tc) 104W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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SIA466EDJ-T1-GE3
Vishay Siliconix, N-Channel 20V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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