IPG20N10S4L22AATMA1

Part NumberIPG20N10S4L22AATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET 2N-CH 100V 20A TDSON-8

DatasheetIPG20N10S4L-22A

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount, Wettable Flank PG-TDSON-8-10

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IPG20N10S4L22AATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	IPG20N10S4L-22A
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1755pF @ 25V
Power - Max	60W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-10

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