IPG20N10S4L35ATMA1


IPG20N10S4L35ATMA1

Part NumberIPG20N10S4L35ATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPG20N10S4L35ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package5000
ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
PackagingTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1105pF @ 25V
Power - Max43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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IPG20N10S4L35ATMA1 - Tags

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