Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

Part NumberIPI086N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO262-3

DatasheetIPx08xN10N3 G

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3

To learn about the specification of IPI086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPI086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPI086N10N3GXKSA1.
We are offering IPI086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPI086N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

IPI086N10N3GXKSA1 - Related Products

	IPD70R1K4CEAUMA1	Infineon Technologies, N-Channel 700V 5.4A (Tc) 53W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	IXFN80N50P	IXYS, N-Channel 500V 66A (Tc) 700W (Tc) Chassis Mount SOT-227B, PolarHV™	View
	2N7002T-TP	Micro Commercial Co, N-Channel 60V 115mA 150mW Surface Mount SOT-523,	View
	FDB8444	ON Semiconductor, N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	SIHG30N60E-GE3	Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC,	View
	PSMN1R2-30YLDX	Nexperia USA Inc., N-Channel 30V 100A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	RCX100N25	Rohm Semiconductor, N-Channel 250V 10A (Ta) 40W (Tc) Through Hole TO-220FM,	View
	BUK7Y7R6-40EX	Nexperia USA Inc., N-Channel 40V 79A (Tc) 94.3W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	CSD18534Q5A	Texas Instruments, N-Channel 60V 13A (Ta), 50A (Tc) 3.1W (Ta), 77W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	NTMFS4955NT3G	ON Semiconductor, N-Channel 30V 9.7A (Ta), 48A (Tc) 920mW (Ta), 23.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STP5NK60Z	STMicroelectronics, N-Channel 600V 5A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH™	View
	MVGSF1N02LT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),	View

IPI086N10N3GXKSA1 - Tags

IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 PDF IPI086N10N3GXKSA1 datasheet IPI086N10N3GXKSA1 specification IPI086N10N3GXKSA1 image IPI086N10N3GXKSA1 India Renesas Electronics India IPI086N10N3GXKSA1 buy IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 price IPI086N10N3GXKSA1 distributor IPI086N10N3GXKSA1 supplier IPI086N10N3GXKSA1 wholesales