IPI086N10N3GXKSA1
IPI086N10N3GXKSA1
Part Number IPI086N10N3GXKSA1 Description MOSFET N-CH 100V 80A TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
To learn about the specification of IPI086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPI086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPI086N10N3GXKSA1.
We are offering IPI086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPI086N10N3GXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx08xN10N3 G Standard Package 500 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V Vgs(th) (Max) @ Id 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
IPI086N10N3GXKSA1 - Related ProductsMore >>
STD120N4LF6 STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI
View
APT48M80L Microsemi Corporation, N-Channel 800V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L],
View
RQ3E080GNTB Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3),
View
STQ2HNK60ZR-AP STMicroelectronics, N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™
View
STD6NK50ZT4 STMicroelectronics, N-Channel 500V 5.6A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™
View
SI7450DP-T1-E3 Vishay Siliconix, N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIS862DN-T1-GE3 Vishay Siliconix, N-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IXFN74N100X IXYS, N-Channel 1000V 74A (Tc) 1170W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
DMN3024LK3-13 Diodes Incorporated, N-Channel 30V 9.78A (Ta) 2.17W (Ta) Surface Mount TO-252-3,
View
IPP200N25N3GXKSA1 Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
FCPF190N65FL1 ON Semiconductor, N-Channel 650V 20.6A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET® II
View
IXTA36N30P IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarHT™
View
IPI086N10N3GXKSA1 - Tags
English
