Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTA36N30P

IXTA36N30P

IXTA36N30P

Part NumberIXTA36N30P

ManufacturerIXYS

DescriptionMOSFET N-CH 300V 36A TO-263

DatasheetIXT(A,P,Q)36N30P

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA)

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IXTA36N30P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(A,P,Q)36N30P
Standard Package	50
Manufacturer	IXYS
Series	PolarHT™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (IXTA)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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