Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

Part NumberSIS892ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 28A PPAK 1212

DatasheetSiS892ADN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892ADN-T1-GE3.
We are offering SIS892ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiS892ADN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892ADN-T1-GE3 - Related Products

	SI7116DN-T1-GE3	Vishay Siliconix, N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI8472DB-T2-E1	Vishay Siliconix, N-Channel 20V 780mW (Ta) Surface Mount 4-Micro Foot (1x1), TrenchFET®	View
	STL2N80K5	STMicroelectronics, N-Channel 800V 2A (Tc) 33W (Tc) Surface Mount PowerFlat™ (5x6), SuperMESH5™	View
	IRFP460APBF	Vishay Siliconix, N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-247-3,	View
	BSZ097N10NS5ATMA1	Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	FCPF165N65S3L1	ON Semiconductor, N-Channel 650V 19A (Tc) 35W (Tc) Through Hole TO-220F-3, SuperFET® III	View
	SPB07N60C3ATMA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	IXTA110N055T2	IXYS, N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263 (IXTA), TrenchT2™	View
	BUK7208-40B,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	DMT5015LFDF-7	Diodes Incorporated, N-Channel 50V 9.1A (Ta) 820mW (Ta) Surface Mount 6-UDFN2020 (2x2),	View
	IAUS300N08S5N012ATMA1	Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOG-8-1, Automotive, AEC-Q101, OptiMOS™	View
	FKI06269	Sanken, N-Channel 60V 24A (Tc) 29W (Tc) Through Hole TO-220F,	View

SIS892ADN-T1-GE3 - Tags

SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 PDF SIS892ADN-T1-GE3 datasheet SIS892ADN-T1-GE3 specification SIS892ADN-T1-GE3 image SIS892ADN-T1-GE3 India Renesas Electronics India SIS892ADN-T1-GE3 buy SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 price SIS892ADN-T1-GE3 distributor SIS892ADN-T1-GE3 supplier SIS892ADN-T1-GE3 wholesales