Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

Part NumberSIS892ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 28A PPAK 1212

DatasheetSiS892ADN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892ADN-T1-GE3.
We are offering SIS892ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiS892ADN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892ADN-T1-GE3 - Related Products

	DN2540N3-G-P003	Microchip Technology, N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),	View
	FDP032N08	ON Semiconductor, N-Channel 75V 120A (Tc) 375W (Tc) Through Hole TO-220-3, PowerTrench®	View
	IPA80R450P7XKSA1	Infineon Technologies, N-Channel 800V 11A (Tc) 29W (Tc) Through Hole TO-220-3F, CoolMOS™	View
	IRFB23N20DPBF	Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB, HEXFET®	View
	NTD20N06T4G	ON Semiconductor, N-Channel 60V 20A (Ta) 1.88W (Ta), 60W (Tj) Surface Mount DPAK,	View
	TPHR6503PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	FDT3N40TF	ON Semiconductor, N-Channel 400V 2A (Tc) 2W (Tc) Surface Mount SOT-223-4, UniFET™	View
	STD35NF06LT4	STMicroelectronics, N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK, STripFET™ II	View
	TSM230N06CP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 34A (Tc) 104W (Tc) Surface Mount TO-252, (D-Pak),	View
	NTMFS4C03NT1G	ON Semiconductor, N-Channel 30V 30A (Ta), 136A (Tc) 3.1W (Ta), 64W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	CSD19532Q5BT	Texas Instruments, N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	HAT2173H-EL-E	Renesas Electronics America, N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK,	View

SIS892ADN-T1-GE3 - Tags

SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 PDF SIS892ADN-T1-GE3 datasheet SIS892ADN-T1-GE3 specification SIS892ADN-T1-GE3 image SIS892ADN-T1-GE3 India Renesas Electronics India SIS892ADN-T1-GE3 buy SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 price SIS892ADN-T1-GE3 distributor SIS892ADN-T1-GE3 supplier SIS892ADN-T1-GE3 wholesales