IPN60R2K1CEATMA1
IPN60R2K1CEATMA1
Part Number IPN60R2K1CEATMA1 Description MOSFET NCH 600V 3.7A SOT223 Package / Case SOT-223-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN60R2K1CEATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN60R2K1CE Standard Package 3000 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1Ohm @ 800mA, 10V Vgs(th) (Max) @ Id 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V FET Feature Super Junction Power Dissipation (Max) 5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case SOT-223-3
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