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IPP65R190E6XKSA1

IPP65R190E6XKSA1

Part NumberIPP65R190E6XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 20.2A TO220

DatasheetIPP65R190E6

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3

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IPP65R190E6XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPP65R190E6
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	73nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 100V
FET Feature	-
Power Dissipation (Max)	151W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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