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IPT059N15N3ATMA1


IPT059N15N3ATMA1

Part NumberIPT059N15N3ATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPT059N15N3ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C155A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 75V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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