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IPD30N06S215ATMA2

IPD30N06S215ATMA2

Part NumberIPD30N06S215ATMA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 55V 30A TO252-3

DatasheetIPD30N06S2-15

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

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IPD30N06S215ATMA2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD30N06S2-15
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1485pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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