IRF1010EZPBF
IRF1010EZPBF
Part Number IRF1010EZPBF Description MOSFET N-CH 60V 75A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB
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IRF1010EZPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF1010EZ (S,L) PbF Standard Package 50 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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