IRF200S234
IRF200S234
Part Number IRF200S234
Description TRENCH_MOSFETS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK
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IRF200S234 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF200S234
Standard Package 800
Manufacturer Infineon Technologies
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 90A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16.9mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6484pF @ 50V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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