IRF510STRLPBF
IRF510STRLPBF
Part Number IRF510STRLPBF
Description MOSFET N-CH 100V 5.6A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 5.6A (Tc) 43W (Tc) Surface Mount D2PAK
To learn about the specification of IRF510STRLPBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRF510STRLPBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRF510STRLPBF.
We are offering IRF510STRLPBF for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IRF510STRLPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF510S, SiHF510S
Standard Package 800
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF510STRLPBF - Related ProductsMore >>
TK35N65W,S1F
Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV
View
SI7190DP-T1-GE3
Vishay Siliconix, N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPP70N10S312AKSA1
Infineon Technologies, N-Channel 100V 70A (Tc) 125W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
View
2N7002E-T1-E3
Vishay Siliconix, N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
2N7002KW
ON Semiconductor, N-Channel 60V 310mA (Ta) 350mW (Ta) Surface Mount SC-70 (SOT323),
View
TPH7R204PL,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 48A (Tc) 69W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
STP18NM80
STMicroelectronics, N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-220AB, MDmesh™
View
IRF8010STRLPBF
Infineon Technologies, N-Channel 100V 80A (Tc) 260W (Tc) Surface Mount D2PAK, HEXFET®
View
IPD80R1K0CEATMA1
Infineon Technologies, N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CE
View
IXFQ120N25X3
IXYS, N-Channel 250V 120A (Tc) 520W (Tc) Through Hole TO-3P, HiPerFET™
View
SI2318DS-T1-GE3
Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
STB12NK80ZT4
STMicroelectronics, N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH™
View
IRF510STRLPBF - Tags