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IRF5210LPBF

IRF5210LPBF

Part NumberIRF5210LPBF

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 100V 38A TO-262

DatasheetIRF5210(S,L)PbF

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262

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IRF5210LPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF5210(S,L)PbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2780pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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