Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

Part NumberSISS27ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A POWERPAK1212

DatasheetSISS27ADN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS27ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS27ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS27ADN-T1-GE3.
We are offering SISS27ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS27ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS27ADN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 15V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS27ADN-T1-GE3 - Related Products

	RW1A030APT2CR	Rohm Semiconductor, P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	IXTH26P20P	IXYS, P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	IXTH8P50	IXYS, P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH),	View
	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	IXTP18P10T	IXYS, P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™	View
	DMP6185SE-13	Diodes Incorporated, P-Channel 60V 3A (Ta) 1.2W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101	View
	PMZ1200UPEYL	Nexperia USA Inc., P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006-3,	View
	IXTA10P50PTRL	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™	View
	IRFL9110TRPBF	Vishay Siliconix, P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	SQJA37EP-T1_GE3	Vishay Siliconix, P-Channel 30V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	NTR2101PT1G	ON Semiconductor, P-Channel 8V 960mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	IRF9640STRRPBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Surface Mount D2PAK,	View

SISS27ADN-T1-GE3 - Tags

SISS27ADN-T1-GE3 SISS27ADN-T1-GE3 PDF SISS27ADN-T1-GE3 datasheet SISS27ADN-T1-GE3 specification SISS27ADN-T1-GE3 image SISS27ADN-T1-GE3 India Renesas Electronics India SISS27ADN-T1-GE3 buy SISS27ADN-T1-GE3 SISS27ADN-T1-GE3 price SISS27ADN-T1-GE3 distributor SISS27ADN-T1-GE3 supplier SISS27ADN-T1-GE3 wholesales