Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

Part NumberSISS27ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A POWERPAK1212

DatasheetSISS27ADN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS27ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS27ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS27ADN-T1-GE3.
We are offering SISS27ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS27ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS27ADN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4660pF @ 15V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS27ADN-T1-GE3 - Related Products

	SIR873DP-T1-GE3	Vishay Siliconix, P-Channel 150V 37A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	DMP6050SPS-13	Diodes Incorporated, P-Channel 60V 5.7A (Ta) 1.3W Surface Mount PowerDI5060-8,	View
	CPH3350-TL-W	ON Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	ZXMP10A13FTA	Diodes Incorporated, P-Channel 100V 600mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	SI8483DB-T2-E1	Vishay Siliconix, P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	SQS401ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	STS10P4LLF6	STMicroelectronics, P-Channel 40V 10A (Ta) 2.7W (Ta) Surface Mount 8-SO, STripFET™ F6	View
	SIA429DJT-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	NVMS5P02R2G	ON Semiconductor, P-Channel 20V 3.95A (Ta) Surface Mount 8-SOIC,	View
	IRF9393TRPBF	Infineon Technologies, P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SSM3J46CTB(TPL3)	Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) Surface Mount CST3B, U-MOSVI	View
	SUM70101EL-GE3	Vishay Siliconix, P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®	View

SISS27ADN-T1-GE3 - Tags

SISS27ADN-T1-GE3 SISS27ADN-T1-GE3 PDF SISS27ADN-T1-GE3 datasheet SISS27ADN-T1-GE3 specification SISS27ADN-T1-GE3 image SISS27ADN-T1-GE3 India Renesas Electronics India SISS27ADN-T1-GE3 buy SISS27ADN-T1-GE3 SISS27ADN-T1-GE3 price SISS27ADN-T1-GE3 distributor SISS27ADN-T1-GE3 supplier SISS27ADN-T1-GE3 wholesales