Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7157DP-T1-GE3

SI7157DP-T1-GE3

SI7157DP-T1-GE3

Part NumberSI7157DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 60A PPAK SO-8

DatasheetSI7157DP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7157DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7157DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7157DP-T1-GE3.
We are offering SI7157DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7157DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7157DP-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	625nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	22000pF @ 10V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7157DP-T1-GE3 - Related Products

	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	AON7407	Alpha & Omega Semiconductor Inc., P-Channel 20V 14.5A (Ta), 40A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount 8-DFN (3x3),	View
	IXTA26P20P	IXYS, P-Channel 200V 26A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™	View
	TPC6111(TE85L,F,M)	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8), U-MOSV	View
	IRLML2246TRPBF	Infineon Technologies, P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SQM40P10-40L_GE3	Vishay Siliconix, P-Channel 100V 40A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	SI5403DC-T1-GE3	Vishay Siliconix, P-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®	View
	SI7463DP-T1-E3	Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	2SJ305TE85LF	Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,	View
	AUIRFR5305	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	FDD5614P	ON Semiconductor, P-Channel 60V 15A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252, PowerTrench®	View
	IRF9520PBF	Vishay Siliconix, P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB,	View

SI7157DP-T1-GE3 - Tags

SI7157DP-T1-GE3 SI7157DP-T1-GE3 PDF SI7157DP-T1-GE3 datasheet SI7157DP-T1-GE3 specification SI7157DP-T1-GE3 image SI7157DP-T1-GE3 India Renesas Electronics India SI7157DP-T1-GE3 buy SI7157DP-T1-GE3 SI7157DP-T1-GE3 price SI7157DP-T1-GE3 distributor SI7157DP-T1-GE3 supplier SI7157DP-T1-GE3 wholesales