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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFBC30AS,AL, SiHFBC30AS,AL
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB036N12N3GATMA1
Infineon Technologies, N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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TSM090N03ECP ROG
Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),
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STW40N95DK5
STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247, MDmesh™ DK5
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IPS80R900P7AKMA1
Infineon Technologies, N-Channel 800V 6A (Tc) 45W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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SIRA04DP-T1-GE3
Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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RUM003N02T2L
Rohm Semiconductor, N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount VMT3,
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SIR698DP-T1-GE3
Vishay Siliconix, N-Channel 100V 7.5A (Tc) 3.7W (Ta), 23W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFU1N60APBF
Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA,
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IRF100S201
Infineon Technologies, N-Channel 100V 192A (Tc) 441W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
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IRFZ10PBF
Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,
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IRFZ14SPBF
Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
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CPC3909ZTR
IXYS Integrated Circuits Division, N-Channel 400V 300mA (Ta) 2.5W (Ta) Surface Mount SOT-223,
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