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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD25N06-22L
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 25V
FET Feature -
Power Dissipation (Max) 62W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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IRFP450LCPBF
Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,
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BUK9609-75A,118
Nexperia USA Inc., N-Channel 75V 75A (Tc) 230W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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ZVN2110GTA
Diodes Incorporated, N-Channel 100V 500mA (Ta) 2W (Ta) Surface Mount SOT-223,
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STWA70N60DM6
STMicroelectronics, N-Channel 600V 62A Through Hole TO-247 Long Leads, MDmesh™ DM6
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SQJA68EP-T1_GE3
Vishay Siliconix, N-Channel 100V 14A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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SSM3K345R,LF
Toshiba Semiconductor and Storage, N-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
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IPW90R340C3FKSA1
Infineon Technologies, N-Channel 900V 15A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™
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STD170N4F7AG
STMicroelectronics, N-Channel 40V 80A (Tc) 172W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™
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IRFB7434PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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