Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFL38N100Q2

IXFL38N100Q2

IXFL38N100Q2

Part NumberIXFL38N100Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 29A ISOPLUS264

DatasheetIXFL38N100Q2

Package / CaseISOPLUS264™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 29A (Tc) 380W (Tc) Through Hole ISOPLUS264™

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IXFL38N100Q2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFL38N100Q2
Standard Package	25
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 25V
FET Feature	-
Power Dissipation (Max)	380W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS264™
Package / Case	ISOPLUS264™

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IXFL38N100Q2 - Tags

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