SIJA58DP-T1-GE3
SIJA58DP-T1-GE3
Part Number SIJA58DP-T1-GE3
Description MOSFET N-CH 40V 60A POWERPAKSO-8
Package / Case PowerPAK® SO-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIJA58DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJA58DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJA58DP-T1-GE3.
We are offering SIJA58DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIJA58DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIJA58DP
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 20V
FET Feature -
Power Dissipation (Max) 27.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
SIJA58DP-T1-GE3 - Related ProductsMore >>
SSM3K15AMFV,L3F
Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSIII
View
RCD041N25TL
Rohm Semiconductor, N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,
View
IXTA64N10L2
IXYS, N-Channel 100V 64A (Tc) 357W (Tc) Surface Mount TO-263AA, Linear L2™
View
NVR4501NT1G
ON Semiconductor, N-Channel 20V 3.2A (Ta) 1.25W (Tj) Surface Mount SOT-23-3 (TO-236),
View
BSZ0904NSIATMA1
Infineon Technologies, N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 37W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
IRFP4710PBF
Infineon Technologies, N-Channel 100V 72A (Tc) 190W (Tc) Through Hole TO-247AC, HEXFET®
View
FCPF400N60
ON Semiconductor, N-Channel 600V 10A (Tc) 31W (Tc) Through Hole TO-220F, SuperFET® II
View
IRF7807VTRPBF
Infineon Technologies, N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
NDS351AN
ON Semiconductor, N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
DMN4468LSS-13
Diodes Incorporated, N-Channel 30V 10A (Ta) 1.52W (Ta) Surface Mount 8-SO,
View
PHB33NQ20T,118
Nexperia USA Inc., N-Channel 200V 32.7A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
View
2N7002E-T1-E3
Vishay Siliconix, N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SIJA58DP-T1-GE3 - Tags