Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFY4N85X

IXFY4N85X

IXFY4N85X

Part NumberIXFY4N85X

ManufacturerIXYS

DescriptionMOSFET N-CH 850V 3.5A TO252

DatasheetIXFx4N85X

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 850V 3.5A (Tc) 150W (Tc) Surface Mount TO-252 (IXFY)

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IXFY4N85X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx4N85X
Standard Package	70
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	850V
Current - Continuous Drain (Id) @ 25°C	3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	247pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (IXFY)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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IXFY4N85X - Tags

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