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IXTQ200N10T

IXTQ200N10T

Part NumberIXTQ200N10T

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 200A TO-3P

DatasheetIXT(H,Q)200N10T

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-3P

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IXTQ200N10T - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(H,Q)200N10T
Standard Package	30
Manufacturer	IXYS
Series	TrenchMV™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	152nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
FET Feature	-
Power Dissipation (Max)	550W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3

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