IRFPG50PBF
IRFPG50PBF
Part Number IRFPG50PBF Description MOSFET N-CH 1000V 6.1A TO-247AC Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 6.1A (Tc) 190W (Tc) Through Hole TO-247-3
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IRFPG50PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFPG50, SiHFPG50 Standard Package 25 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 3.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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