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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FK4B01100L1
Panasonic Electronic Components, N-Channel 12V 3.4A (Ta) 360mW (Ta) Surface Mount XLGA004-W-0808-RA01,
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DMNH6008SPSQ-13
Diodes Incorporated, N-Channel 60V 16.5A (Ta), 88A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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SIHW61N65EF-GE3
Vishay Siliconix, N-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AD,
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SIHP100N60E-GE3
Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220AB,
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STF13NM60ND
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, FDmesh™ II
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IXFK32N100X
IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
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STW20N95DK5
STMicroelectronics, N-Channel 950V 18A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ DK5
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IPD25N06S4L30ATMA2
Infineon Technologies, N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11, Automotive, AEC-Q101, OptiMOS™
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IRFI530GPBF
Vishay Siliconix, N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3,
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TSM70N900CH C5G
Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Through Hole TO-251 (IPAK),
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TSM70N900CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),
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NTB45N06LT4G
ON Semiconductor, N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount D2PAK,
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