Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN1R603PL,L1Q

TPN1R603PL,L1Q

TPN1R603PL,L1Q

Part NumberTPN1R603PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPN1R603PL

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN1R603PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN1R603PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN1R603PL,L1Q.
We are offering TPN1R603PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN1R603PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN1R603PL
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 15V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN1R603PL,L1Q - Related Products

	NTF3055L108T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	FCP190N60	ON Semiconductor, N-Channel 600V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3, SuperFET® II	View
	SI7114ADN-T1-GE3	Vishay Siliconix, N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	R6007JND3TL1	Rohm Semiconductor, N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount TO-252,	View
	NTMFS4C05NT1G	ON Semiconductor, N-Channel 30V 11.9A (Ta) 770mW (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	RSJ400N06TL	Rohm Semiconductor, N-Channel 60V 40A (Ta) 50W (Tc) Surface Mount LPTS,	View
	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	SQJA62EP-T1_GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	FDMC8622	ON Semiconductor, N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	BSN20-7	Diodes Incorporated, N-Channel 50V 500mA (Ta) 600mW (Ta) Surface Mount SOT-23,	View
	NVD5C434NT4G	ON Semiconductor, N-Channel 40V 163A (Tc) 117W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	TK100A08N1,S4X	Toshiba Semiconductor and Storage, N-Channel 80V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View

TPN1R603PL,L1Q - Tags

TPN1R603PL,L1Q TPN1R603PL,L1Q PDF TPN1R603PL,L1Q datasheet TPN1R603PL,L1Q specification TPN1R603PL,L1Q image TPN1R603PL,L1Q India Renesas Electronics India TPN1R603PL,L1Q buy TPN1R603PL,L1Q TPN1R603PL,L1Q price TPN1R603PL,L1Q distributor TPN1R603PL,L1Q supplier TPN1R603PL,L1Q wholesales