Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

Part NumberSQ2318AES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V SOT23

DatasheetSQ2318AES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2318AES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2318AES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2318AES-T1_GE3.
We are offering SQ2318AES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2318AES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2318AES
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2318AES-T1_GE3 - Related Products

	BSC028N06NSATMA1	Infineon Technologies, N-Channel 60V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	DMN2044UCB4-7	Diodes Incorporated, N-Channel 20V 3.3A (Ta) 720mW Surface Mount U-WLB1010-4,	View
	IRF8714TRPBF	Infineon Technologies, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	NTMFS6H801NT1G	ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	CSD19532Q5BT	Texas Instruments, N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	STD10NM60N	STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II	View
	FDMS86252	ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SIHH180N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	IPD50N10S3L16ATMA1	Infineon Technologies, N-Channel 100V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	BS170P	Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	RQ3E080BNTB	Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	PMZ600UNEYL	Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View

SQ2318AES-T1_GE3 - Tags

SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 PDF SQ2318AES-T1_GE3 datasheet SQ2318AES-T1_GE3 specification SQ2318AES-T1_GE3 image SQ2318AES-T1_GE3 India Renesas Electronics India SQ2318AES-T1_GE3 buy SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 price SQ2318AES-T1_GE3 distributor SQ2318AES-T1_GE3 supplier SQ2318AES-T1_GE3 wholesales