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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2318AES
Standard Package 3000
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 10V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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ON Semiconductor, N-Channel 600V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3, SuperFET® II
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STF10N60DM2
STMicroelectronics, N-Channel 600V 8A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ DM2
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TSM60NB041PW C1G
Taiwan Semiconductor Corporation, N-Channel 600V 78A (Tc) 446W (Tc) Through Hole TO-247,
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