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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD6NK50ZT4
STMicroelectronics, N-Channel 500V 5.6A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™
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IXFH16N50P3
IXYS, N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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SQD40N06-14L_GE3
Vishay Siliconix, N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®
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ZVN4310GTA
Diodes Incorporated, N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223,
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BSS126H6327XTSA2
Infineon Technologies, N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, SIPMOS®
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IPSA70R950CEAKMA1
Infineon Technologies, N-Channel 700V 8.7A (Tc) 94W (Tc) Through Hole PG-TO251-3-347,
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SUM110N10-09-E3
Vishay Siliconix, N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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BSC030N04NSGATMA1
Infineon Technologies, N-Channel 40V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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FQP6N90C
ON Semiconductor, N-Channel 900V 6A (Tc) 167W (Tc) Through Hole TO-220-3, QFET®
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BSC12DN20NS3GATMA1
Infineon Technologies, N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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SIR626DP-T1-RE3
Vishay Siliconix, N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SQJA00EP-T1_GE3
Vishay Siliconix, N-Channel 60V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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