SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Part Number SIDR392DP-T1-GE3
Description MOSFET N-CHAN 30V
Package / Case PowerPAK® SO-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
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SIDR392DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR390DP
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 15V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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