Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

Part NumberSIDR392DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 30V

DatasheetSIDR390DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR392DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR392DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR392DP-T1-GE3.
We are offering SIDR392DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR392DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR390DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	188nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	9530pF @ 15V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR392DP-T1-GE3 - Related Products

	FDD6N50TM-F085	ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101	View
	SIHG25N50E-GE3	Vishay Siliconix, N-Channel 500V 26A (Tc) 250W (Tc) Through Hole TO-247AC,	View
	IXTT30N50L2	IXYS, N-Channel 500V 30A (Tc) 400W (Tc) Surface Mount TO-268, Linear L2™	View
	FDN537N	ON Semiconductor, N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	BUK9620-55A,118	Nexperia USA Inc., N-Channel 55V 54A (Tc) 118W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IXFK180N10	IXYS, N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	IRFR3410TRPBF	Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	CEDM7004VL TR	Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	DMN60H080DS-7	Diodes Incorporated, N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3,	View
	R6024KNJTL	Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Surface Mount LPTS,	View
	CDM2206-800LR SL	Central Semiconductor Corp, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220,	View
	STB75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™	View

SIDR392DP-T1-GE3 - Tags

SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 PDF SIDR392DP-T1-GE3 datasheet SIDR392DP-T1-GE3 specification SIDR392DP-T1-GE3 image SIDR392DP-T1-GE3 India Renesas Electronics India SIDR392DP-T1-GE3 buy SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 price SIDR392DP-T1-GE3 distributor SIDR392DP-T1-GE3 supplier SIDR392DP-T1-GE3 wholesales